AP70L02GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
9mΩ
66A
Description
The Advanced Power MOSFETs from APEC provide the
designer
with the best combination of fast switching,
ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70L02GP) is available for low-profile applications.
G
D
G D
S
TO-263(S)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
S
Rating
25
±20
66
42
210
66
0.53
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-case
Rthj-amb
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.9
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200831073-1/6
AP70L02GS/P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
25
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.037
Max. Units
-
-
9
18
3
-
1
25
±100
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
-
-
-
-
-
-
-
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=33A
V
GS
=4.5V, I
D
=20A
-
-
-
25
-
-
-
23
3
17
8.8
95
24
14
790
475
195
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=33A
V
DS
=25V, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=± 20V
I
D
=33A
V
DS
=20V
V
GS
=5V
V
DS
=15V
I
D
=33A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.45Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.26V
T
j
=25℃, I
S
=66A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
66
210
1.26
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/6
AP70L02GS/P
250
140
T
C
=25
o
C
200
V
G
=10V
V
G
=8.0V
120
T
C
=150
o
C
V
G
=10V
V
G
=8.0V
V
G
=6.0V
100
I
D
, Drain Current (A)
150
I
D
, Drain Current (A)
80
V
G
=6.0V
100
V
G
=5.0V
60
V
G
=5.0V
50
40
V
G
=4.0V
V
G
=4.0V
20
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
23
1.8
21
I
D
=10A
T
c
=25
℃
I
D
=10A
1.6
V
G
=10V
19
15
Normalized R
DS(ON)
17
1.4
R
DS(ON)
(m
Ω
)
1.2
13
11
1
9
0.8
7
5
2
3
4
5
6
7
8
9
10
11
0.6
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3/6
AP70L02GS/P
80
80
70
70
60
60
I
D
, Drain Current (A)
50
50
P
D
(W)
25
50
75
100
125
150
40
40
30
30
20
20
10
10
0
0
0
50
100
150
T
c
, Case Temperature (
o
C)
T
c
,Case Temperature ( C)
o
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
DUTY=0.5
100
Normalized Thermal Response (R
thjc
)
0.2
10us
I
D
(A)
0.1
0.05
0.02
0.01
SINGLE PULSE
0.1
100us
10
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1ms
T
c
=25
o
C
Single Pulse
10ms
100ms
1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4/6
AP70L02GS/P
16
10000
f=1.0MHz
14
I
D
=33A
V
DS
=20V
V
GS
, Gate to Source Voltage (V)
12
10
8
C (pF)
1000
Ciss
Coss
6
4
Crss
2
0
0
5
10
15
20
25
30
35
40
45
50
100
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
2
I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
1
V
GS(th)
(V)
1
0
1.1
1.3
1.5
-50
0.1
0.1
0.3
0.5
0.7
0.9
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature(
o
C)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5/6
嵌入式系统
